Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5505CPBF IRFR5505CPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047082-IRFR5505CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047082-IRFR5505CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Power Management
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5505CPBF - 1047082-IRFR5505CPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5505CPBF
1047082-IRFR5505CPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5505CPBF 1047082-IRFR5505CPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047082-IRFR5505CPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 1047082-IRFR5505CPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 9.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRFR5505CPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR5505CPBF-ND
Single FETs, MOSFETs IRFR5505CPBF-ND
P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak

P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR5505CPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR5505CPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR5505CPBF
MOSFET P-CH 55V 18A DPAK

MOSFET P-CH 55V 18A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1047082-IRFR5505CPBF IRFR5505CPBF-ND IRFR5505CPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5505CPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 55 volts
PD 57000 milliwatts
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