Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3607PBF IRFR3607PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 083944-IRFR3607PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 083944-IRFR3607PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3607PBF - 083944-IRFR3607PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3607PBF
083944-IRFR3607PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3607PBF 083944-IRFR3607PBF
Manufacturer: Infineon Technologies Win Source Part Number: 083944-IRFR3607PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 100μA Max Gate Charge: 84nC @ 10V Max Input Capacitance: 3070pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 083944-IRFR3607PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 100μA
Max Gate Charge: 84nC @ 10V
Max Input Capacitance: 3070pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 46A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFR3607PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR3607PBF-ND
Single FETs, MOSFETs IRFR3607PBF-ND
N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount D-Pak

N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Singapore, Singapore
75V 56A DPAK MOSFET Transistor
278-IRFR3607PBF
75V 56A DPAK MOSFET Transistor 278-IRFR3607PBF
MOSFET N-CH 75V 56A DPAK Product overview: IRFR3607PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 56A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 56A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR3607PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 75V 56A DPAK Product overview: IRFR3607PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 56A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 56A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR3607PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFR3607PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR3607PBF
Single FETs, MOSFETs IRFR3607PBF
MOSFET N-CH 75V 56A DPAK

MOSFET N-CH 75V 56A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR3607PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR3607PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR3607PBF
MOSFET N-CH 75V 56A DPAK

MOSFET N-CH 75V 56A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 083944-IRFR3607PBF IRFR3607PBF-ND 278-IRFR3607PBF IRFR3607PBF IRFR3607PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3607PBF Single FETs, MOSFETs 75V 56A DPAK MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 75 volts 75 volts
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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