Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3505TRRPBF IRFR3505TRRPBF

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065579-IRFR3505TRRP BF Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 140 W Number of Pins: 3 Rise Time: 74 ns Fall Time: 54 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Alternative Parts (Cross-Reference): IRFR3505TRRPBFIRFR35 05TRRPBF.; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 71 A Turn-Off Delay Time: 43 ns Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065579-IRFR3505TRRP BF Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 140 W Number of Pins: 3 Rise Time: 74 ns Fall Time: 54 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Alternative Parts (Cross-Reference): IRFR3505TRRPBFIRFR35 05TRRPBF.; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 71 A Turn-Off Delay Time: 43 ns Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3505TRRPBF - 1065579-IRFR3505TRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3505TRRPBF
1065579-IRFR3505TRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3505TRRPBF 1065579-IRFR3505TRRPBF
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065579-IRFR3505TRRP BF Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 55 V Number of Elements: 1 Power Dissipation: 140 W Number of Pins: 3 Rise Time: 74 ns Fall Time: 54 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: DPAK Alternative Parts (Cross-Reference): IRFR3505TRRPBFIRFR35 05TRRPBF.; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Turn-On Delay Time: 13 ns Continuous Drain Current (ID): 71 A Turn-Off Delay Time: 43 ns Gate to Source Voltage (Vgs): 20 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065579-IRFR3505TRRPBF
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 55 V
Number of Elements: 1
Power Dissipation: 140 W
Number of Pins: 3
Rise Time: 74 ns
Fall Time: 54 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Alternative Parts (Cross-Reference): IRFR3505TRRPBFIRFR3505TRRPBF.;
Popularity: Low
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Turn-On Delay Time: 13 ns
Continuous Drain Current (ID): 71 A
Turn-Off Delay Time: 43 ns
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1065579-IRFR3505TRRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3505TRRPBF
PD 140000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZHN120R060M1T - AIMZHN120R060M1T - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
N-channel 40 V, 1.0 mΩ standard level MOSFET in LFPAK88 - BUK7S1R0-40HJ - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 325000 milliamps
View Details
6 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR - ALD212908ASAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
View Details
4 suppliers