Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220NTRRPBF IRFR220NTRRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047028-IRFR220NTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1047028-IRFR220NTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220NTRRPBF - 1047028-IRFR220NTRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220NTRRPBF
1047028-IRFR220NTRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220NTRRPBF 1047028-IRFR220NTRRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1047028-IRFR220NTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 43W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 1047028-IRFR220NTRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 43W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - IRFR220NTRRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR220NTRRPBF-ND
Single FETs, MOSFETs IRFR220NTRRPBF-ND
N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak

N-Channel 200V 5A (Tc) 43W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC

MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR220NTRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR220NTRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR220NTRRPBF
MOSFET N-CH 200V 5A DPAK

MOSFET N-CH 200V 5A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1047028-IRFR220NTRRPBF IRFR220NTRRPBF-ND IRFR220NTRRPBF IRFR220NTRRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR220NTRRPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 43000 milliwatts
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