MOSFET N-CH 200V 17A DPAK Product overview: IRFR15N20DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 17A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 17A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR15N20DTRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 17A DPAK
N-Channel 200V 17A (Tc) 3W (Ta), 140W (Tc) Surface Mount D-PAK (TO-252AA)
N-Channel 200V 17A (Tc) 3W (Ta), 140W (Tc) Surface Mount D-PAK (TO-252AA)
N-Channel 200V 17A (Tc) 3W (Ta), 140W (Tc) Surface Mount D-PAK (TO-252AA)
Manufacturer: Infineon Technologies
Win Source Part Number: 001276-IRFR15N20DTRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 140W (Tc)
Family Name: IRFR15N20D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 910pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 165 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): STD20N20T4; FQD18N20V2TF; FQD18N20V2;
Introduction Date: June 07, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 17A DPAK
MOSFET, N-CH, 200V, 17A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes
MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms
200V 17A 165mΩ@10V,10A 5.5V@250uA N Channel DPAK MOSFETs ROHS
MOSFET N-CH 200V 17A DPAK
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFR15N20DTRPBF | IRFR15N20DTRPBF | IRFR15N20DTRPBFCT-ND | 2583980 | 001276-IRFR15N20DTRPBF | IRFR15N20DTRPBF | 43AC3277 | IRFR15N20DTRPBF | IRFR15N20DTRPBF | 376-IRFR15N20DTRPBF |
| Product Name | 200V 17A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR15N20DTRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 17A, To-252-3; Transistor Polarity Infineon | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET N-CH 200V 17A DPAK |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | |||||
| Transconductance | 0.0040 kS | |||||||||
| PD | 140 milliwatts | 3000 milliwatts | 3000 to 140000 milliwatts | 3000 milliwatts | 3000 milliwatts |
