MOSFET N-CH 100V 9.4A DPAK Product overview: IRFR120NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR120NPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017654-IRFR120NPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 210 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
N-Channel 100V 9.4A (Tc) 48W (Tc) Surface Mount D-Pak
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9.4A I(D), 100V, 0.21OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 9.4A DPAK
N CHANNEL MOSFET, 100V, 9.4A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFR120NPBF | 017654-IRFR120NPBF | IRFR120NPBF-ND | 66790219 | IRFR120NPBF | 63J6913 | 70017039 |
| Product Name | 100V 9.4A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR120NPBF | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 9.4A, D-Pak; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W |
| PD | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tube | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK) | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel |
