Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3815 IRFPS3815

Description
Manufacturer: Infineon Technologies Win Source Part Number: 069517-IRFPS3815 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 441W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SUPER-247 (TO-274AA) Dimension: TO-274AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 390nC @ 10V Max Input Capacitance: 6810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 mOhm @ 63A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 069517-IRFPS3815 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 441W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SUPER-247 (TO-274AA) Dimension: TO-274AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 390nC @ 10V Max Input Capacitance: 6810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 mOhm @ 63A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3815 - 069517-IRFPS3815 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3815
069517-IRFPS3815
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3815 069517-IRFPS3815
Manufacturer: Infineon Technologies Win Source Part Number: 069517-IRFPS3815 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 441W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SUPER-247 (TO-274AA) Dimension: TO-274AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 105A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 390nC @ 10V Max Input Capacitance: 6810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 15 mOhm @ 63A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 069517-IRFPS3815
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 441W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SUPER-247 (TO-274AA)
Dimension: TO-274AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 105A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 390nC @ 10V
Max Input Capacitance: 6810pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 15 mOhm @ 63A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069517-IRFPS3815
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3815
Polarity N-Channel; N-Channel
V(BR)DSS 150 volts
PD 441000 milliwatts
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