Manufacturer: Infineon Technologies
Win Source Part Number: 017649-IRFPS3810PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 580W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SUPER-247 (TO-274AA)
Dimension: TO-274AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 390nC @ 10V
Max Input Capacitance: 6790pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
N-Channel 100V 170A (Tc) 580W (Tc) Through Hole SUPER-247™ (TO-274AA)
MOSFET N-CH 100V 170A SUPER247
MOSFET N-CH 100V 170A SUPER-247
MOSFET N-CH 100V 170A SUPER247 Product overview: IRFPS3810PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 170A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 170A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFPS3810PBF can be used for catalog matching and distributor lookup.
MOSFET 100V SINGLE N-CH 9mOhms 260nC
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 170A;Super-247;PD 580W;gFS 52S
MOSFET N-CH 100V 170A SUPER247
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017649-IRFPS3810PBF | IRFPS3810PBF-ND | IRFPS3810PBF | 278-IRFPS3810PBF | IRFPS3810PBF | 70017490 | IRFPS3810PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFPS3810PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 170A MOSFET Transistor | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 170A;Super-247;PD 580W;gFS 52S | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 580000 milliwatts | 580000 milliwatts | 580000 milliwatts | 580000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3; SUPER-247 (TO-274AA) | TO-274AA | TO-274AA | Tube | TO-274AA |
