Infineon Technologies AG Mosfet Transistor N Ch; Transistor Polarity Infineon IRFPC60LCPBF

Description
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:280W; RoHS Compliant: Yes
Description
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:280W; RoHS Compliant: Yes

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Mosfet Transistor N Ch; Transistor Polarity Infineon - 51AK5967 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor N Ch; Transistor Polarity Infineon
51AK5967
Mosfet Transistor N Ch; Transistor Polarity Infineon 51AK5967
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:280W; RoHS Compliant: Yes

MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:280W; RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 51AK5967
Product Name Mosfet Transistor N Ch; Transistor Polarity Infineon
IDSS 16000 milliamps
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