MOSFET N-CH 200V 94A TO247AC Product overview: IRFP90N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 94A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 94A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP90N20DPBF can be used for catalog matching and distributor lookup.
N-Channel 200V 94A (Tc) 580W (Tc) Through Hole TO-247AC
MOSFET N-Channel 200V 94A TO247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 069514-IRFP90N20DPBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 580W (Tc)
Family Name: IRFP90N20
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 94A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 6040pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 23 mOhm @ 56A, 10V
Alternative Parts (Cross-Reference): APT20M22B2VR; IXTH102N20T; APT20M20LFLL; APT20M20B2LL;
Introduction Date: July 30, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
200V 94A 23mΩ@10V,56A 580W 5V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V
N CHANNEL MOSFET, 200V, 94A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:94A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET MOSFT 200V 94A 23mOhm 180nCAC
MOSFET N-CH 200V 94A TO247AC
MOSFET N-CH 200V 94A TO247AC
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFP90N20DPBF | IRFP90N20DPBF-ND | 6391857 | 6391857P | 069514-IRFP90N20DPBF | IRFP90N20DPBF | 70017459 | 63J6896 | IRFP90N20DPBF | IRFP90N20DPBF | IRFP90N20DPBF |
| Product Name | 200V 94A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP90N20DPBF | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V | N Channel Mosfet, 200V, 94A, To-247Ac; Channel Type Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | ||||||
| Transconductance | 0.0390 kS | 0.0390 kS | |||||||||
| PD | 580 milliwatts | 580000 milliwatts | 580000 milliwatts | 580000 milliwatts | 580000 milliwatts |
