Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4868 IRFP4868

Manufacturer: Infineon Technologies
Win Source Part Number: 040730-IRFP4868
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 517W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 10774pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

MOSFET N-CH 300V 70A TO-247AC Product overview: IRFP4868 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 70A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 70A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFP4868 can be used for catalog matching and distributor lookup.