Manufacturer: Infineon Technologies
Win Source Part Number: 087850-IRFP4668PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Family Name: IRFP4668
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 241nC @ 10V
Max Input Capacitance: 10720pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 9.7 mOhm @ 81A, 10V
Alternative Parts (Cross-Reference): STY130NF20D; IXFB210N20P; IXFX230N20T;
Introduction Date: September 08, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 130A TO247AC
MOSFET N-Ch 200V 130A HEXFET TO247AC
MOSFET N-Ch 200V 130A HEXFET TO247AC
MOSFET N-Ch 200V 130A HEXFET TO247AC
MOSFET N-CH 200V 130A TO247AC Product overview: IRFP4668PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 130A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 130A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP4668PBF can be used for catalog matching and distributor lookup.
N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC
MOSFET N-CH 200V 130A TO247AC
MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg
200V 130A 9.7mΩ@10V,81A 520W 5V@250uA N Channel TO-247AC MOSFETs ROHS
MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free
N CHANNEL MOSFET, 200V, 130A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:30V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 130A, TO-247AC, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:200V, CONTINUOUS DRAIN CURRENT ID:130A, ON RESISTANCE RDS(ON):0.008OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:30V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 200V, 130A, TO-247AC; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:130A; DRAIN SOURCE VOLTAGE VDS:200V; ON RESISTANCE. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Allied Electronics, Inc. | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 087850-IRFP4668PBF | IRFP4668PBF | 6887027 | 6887027P | 278-IRFP4668PBF | IRFP4668PBF-ND | IRFP4668PBF | IRFP4668PBF | IRFP4668PBF | 70017926 | 19P2518 | 66790171 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4668PBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | 200V 130A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free | N Channel Mosfet, 200V, 130A, To-247Ac; Channel Type Infineon | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | ||||||||
| PD | 520000 milliwatts | 520000 milliwatts | 520 milliwatts | 520000 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | TO-247; To-247ac | TO-247; TO-247 | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247 | TO-3; TO-247 |
