Manufacturer: Infineon Technologies
Win Source Part Number: 069509-IRFP4227PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRFP4227
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 25 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): IXFH88N20QSN; IXFX88N20Q; IXFK88N20QSN; IXFK88N20Q ;
Introduction Date: February 06, 2006
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-Channel 200V 65A TO247AC
IRFP4227 - 12V-300V N-CHANNEL PO
MOSFET N-CH 200V 65A TO247AC
N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-247AC
MOSFET MOSFT 200V 65A 25mOhm 70nC Qg
200V 65A 330W 25mΩ@10V,46A 5V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET N-CH 200V 65A TO247AC
POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 200V, 0.025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 200V, 65A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:30V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 069509-IRFP4227PBF | 6504772 | 6504772P | IRFP4227PBF | IRFP4227PBF-ND | IRFP4227PBF | IRFP4227PBF | IRFP4227PBF | 66790139 | 88K4610 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4227PBF | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | N Channel Mosfet, 200V, 65A, To-247Ac; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||||
| PD | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts | |||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; To-247ac | TO-247; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247 | TO-247; TO-247-3 | TO-3; TO-247 |
