Infineon Technologies AG Single FETs, MOSFETs IRFP3703PBF

Description
N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFP3703PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFP3703PBF-ND
Single FETs, MOSFETs IRFP3703PBF-ND
N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC

N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Single FETs, MOSFETs - IRFP3703PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFP3703PBF
Single FETs, MOSFETs IRFP3703PBF
MOSFET N-CH 30V 210A TO247AC

MOSFET N-CH 30V 210A TO247AC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3703PBF - 133449-IRFP3703PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3703PBF
133449-IRFP3703PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3703PBF 133449-IRFP3703PBF
Manufacturer: Infineon Technologies Win Source Part Number: 133449-IRFP3703PBF Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 210A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 209nC @ 10V Max Input Capacitance: 8250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.8 mOhm @ 76A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 133449-IRFP3703PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 210A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 209nC @ 10V
Max Input Capacitance: 8250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 76A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - IRFP3703PBF - Rochester Electronics
Newburyport, MA, United States
IRFP3703 - 90A, 30V, 0.0039ohm, N-Channel MOSFET, TO-247AC

IRFP3703 - 90A, 30V, 0.0039ohm, N-Channel MOSFET, TO-247AC

Supplier's Site Datasheet
Mosfet, N-Ch, 30V, 210A, 175Deg C, 230W; Transistor Polarity Infineon - 64AH3710 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 210A, 175Deg C, 230W; Transistor Polarity Infineon
64AH3710
Mosfet, N-Ch, 30V, 210A, 175Deg C, 230W; Transistor Polarity Infineon 64AH3710
MOSFET, N-CH, 30V, 210A, 175DEG C, 230W; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 210A, 175DEG C, 230W; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC

MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC

Buy Now Datasheet
MOSFET N-CH 30V 210A TO-247AC - 376-IRFP3703PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 210A TO-247AC
376-IRFP3703PBF
MOSFET N-CH 30V 210A TO-247AC 376-IRFP3703PBF
MOSFET N-CH 30V 210A TO-247AC

MOSFET N-CH 30V 210A TO-247AC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP3703PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP3703PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP3703PBF
MOSFET N-CH 30V 210A TO247AC

MOSFET N-CH 30V 210A TO247AC

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Rochester Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFP3703PBF-ND IRFP3703PBF 133449-IRFP3703PBF IRFP3703PBF 64AH3710 IRFP3703PBF 376-IRFP3703PBF IRFP3703PBF
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3703PBF Mosfet, N-Ch, 30V, 210A, 175Deg C, 230W; Transistor Polarity Infineon MOSFET MOSFET N-CH 30V 210A TO-247AC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247AC TO247 TO-3 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 210000 milliamps 210000 milliamps
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