Manufacturer: Infineon Technologies
Win Source Part Number: 133449-IRFP3703PBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 210A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 209nC @ 10V
Max Input Capacitance: 8250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 76A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
IRFP3703 - 90A, 30V, 0.0039ohm, N-Channel MOSFET, TO-247AC
MOSFET N-CH 30V 210A TO247AC Product overview: IRFP3703PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 210A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 210A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP3703PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 210A TO247AC
MOSFET N-CH 30V 210A TO-247AC
MOSFET N-CH 30V 210A TO247AC
MOSFET, N-CH, 30V, 210A, 175DEG C, 230W; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC
| Win Source Electronics | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 133449-IRFP3703PBF | IRFP3703PBF-ND | IRFP3703PBF | 278-IRFP3703PBF | IRFP3703PBF | 376-IRFP3703PBF | IRFP3703PBF | 64AH3710 | IRFP3703PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP3703PBF | Single FETs, MOSFETs | 30V 210A MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 30V 210A TO-247AC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 210A, 175Deg C, 230W; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||||
| PD | 3800 to 230000 milliwatts | 230 milliwatts | 3800 milliwatts | 230000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | TO247 | Tube | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 |
