The IRFP2907PbF is a N-channel HEXFET® Power MOSFET in a TO-247AC package, designed for high-efficiency switching applications such as telecom systems with soft start requirements. It has a drain-to-source voltage rating of 75V and a continuous drain current of 209A at 25°C, with a maximum on-resistance of 4.5mΩ at VGS=10V and ID=125A. The device supports a maximum junction temperature of 175°C, features fast switching, and allows repetitive avalanche operation up to Tjmax. It has a gate-to-source voltage rating of ±20V, a single pulse avalanche energy of 1970mJ, and a peak diode recovery dv/dt of 5.0V/ns. The package is not recommended for surface mount applications. The part is lead-free.
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:209A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 26AC0523 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
