Infineon Technologies AG Channel Type Infineon IRFP2907PBF.

Description
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:209A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet
Description
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:209A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Channel Type Infineon - 26AC0523 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Infineon
26AC0523
Channel Type Infineon 26AC0523
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:209A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:209A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 26AC0523
Product Name Channel Type Infineon
Package Type TO-3
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1610-T1-A - 855049-2SA1610-T1-A - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Module - 40530536 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details