Manufacturer: Infineon Technologies
Win Source Part Number: 091459-IRFP250N
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 123nC @ 10V
Max Input Capacitance: 2159pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 18A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 200V, 0.075OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | Radwell International | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 091459-IRFP250N | 481181 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP250N | Transistor |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 200 volts | |
| PD | 214000 milliwatts |
