N-Channel 200V 30A (Tc) 214W (Tc) Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 069505-IRFP250MPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 123nC @ 10V
Max Input Capacitance: 2159pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 18A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 30A TO247AC
MOSFET N-CH 200V 30A TO247AC Product overview: IRFP250MPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP250MPBF can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 200V, 30A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
200V 30A 75mΩ@10V,18A 214W 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET, N-CH, 200V, 30A, 175DEG C, 214W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:200V; CONTINUOUS DRAIN CURRENT ID:30A; ON RESISTANCE RDS(ON):0.075OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V 30A TO247AC
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IRFP250MPBF-ND | 069505-IRFP250MPBF | IRFP250MPBF | 278-IRFP250MPBF | 91Y4707 | IRFP250MPBF | IRFP250MPBF | 108088353 | IRFP250MPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP250MPBF | Single FETs, MOSFETs | 200V 30A MOSFET Transistor | Mosfet, N-Ch, 200V, 30A, 175Deg C, 214W; Channel Type Infineon | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | Tube | TO-3 | TO-247 | TO-247; TO-247-3 | ||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | |||||
| PD | 214000 milliwatts | 214000 milliwatts | 214 milliwatts | 214000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
