Infineon Technologies AG Single FETs, MOSFETs IRFM460

Description
N-Channel 500V 19A (Tc) 250W (Tc) Through Hole TO-254AA
Request a Quote Datasheet
Description
N-Channel 500V 19A (Tc) 250W (Tc) Through Hole TO-254AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - IRFM460-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFM460-ND
Single FETs, MOSFETs IRFM460-ND
N-Channel 500V 19A (Tc) 250W (Tc) Through Hole TO-254AA

N-Channel 500V 19A (Tc) 250W (Tc) Through Hole TO-254AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM460 - 205371-IRFM460 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM460
205371-IRFM460
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM460 205371-IRFM460
Manufacturer: Infineon Technologies Win Source Part Number: 205371-IRFM460 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Case / Package: TO-254AA Dimension: TO-254-3, TO-254AA (Straight Leads) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 4300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 270 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205371-IRFM460
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Case / Package: TO-254AA
Dimension: TO-254-3, TO-254AA (Straight Leads)
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 4300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 270 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFM460 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFM460
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFM460
MOSFET N-CH 500V 19A TO254AA

MOSFET N-CH 500V 19A TO254AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFM460-ND 205371-IRFM460 IRFM460
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM460 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
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