Infineon Technologies AG Single FETs, MOSFETs IRFL4105TR

Description
N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFL4105TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL4105TR-ND
Single FETs, MOSFETs IRFL4105TR-ND
N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223

N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Singapore
55V 3.7A MOSFET Transistor
278-IRFL4105TR
55V 3.7A MOSFET Transistor 278-IRFL4105TR
MOSFET N-CH 55V 3.7A SOT223 Product overview: IRFL4105TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4105TR can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 3.7A SOT223 Product overview: IRFL4105TR from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4105TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - IRFL4105TR - 804458-IRFL4105TR - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL4105TR
804458-IRFL4105TR
FETs - Single - IRFL4105TR 804458-IRFL4105TR
Manufacturer: Infineon Technologies Win Source Part Number: 804458-IRFL4105TR Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55V Part Status: Obsolete (End Of Life) Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 45mOhm at 3.7A, 10V Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 660pF at 25V Current - Continuous Drain (Id) at 25°C: 3.7A Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: Infineon Technologies
Win Source Part Number: 804458-IRFL4105TR
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55V
Part Status: Obsolete (End Of Life)
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 45mOhm at 3.7A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 660pF at 25V
Current - Continuous Drain (Id) at 25°C: 3.7A
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

Buy Now
MOSFET N-CH 55V 3.7A SOT223 - 376-IRFL4105TR - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 55V 3.7A SOT223
376-IRFL4105TR
MOSFET N-CH 55V 3.7A SOT223 376-IRFL4105TR
MOSFET N-CH 55V 3.7A SOT223

MOSFET N-CH 55V 3.7A SOT223

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL4105TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL4105TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL4105TR
MOSFET N-CH 55V 3.7A SOT223

MOSFET N-CH 55V 3.7A SOT223

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFL4105TR-ND 278-IRFL4105TR 804458-IRFL4105TR 376-IRFL4105TR IRFL4105TR
Product Name Single FETs, MOSFETs 55V 3.7A MOSFET Transistor FETs - Single - IRFL4105TR MOSFET N-CH 55V 3.7A SOT223 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type SOT223; TO-261-4, TO-261AA Tape & Reel (TR) SOT3 -55degC ~ 150degC (TJ)
PD 1000 milliwatts 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Reel Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT)
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRAH - 854965-2N3904RLRAH - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
75V 42A DPAK MOSFET Transistor - 278-AUIRFR2307Z - ERSAELECTRONICS PTE. LTD.
Specs
PD 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
5 suppliers
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor - TGF2979-SM - Qorvo
Specs
Transistor Technology / Material DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers