Infineon Technologies AG Single FETs, MOSFETs IRFL1006PBF

Description
N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFL1006PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL1006PBF-ND
Single FETs, MOSFETs IRFL1006PBF-ND
N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223

N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Singapore
60V 1.6A MOSFET Transistor
278-IRFL1006PBF
60V 1.6A MOSFET Transistor 278-IRFL1006PBF
MOSFET N-CH 60V 1.6A SOT223 Product overview: IRFL1006PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL1006PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 1.6A SOT223 Product overview: IRFL1006PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 1.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL1006PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL1006PBF - 205369-IRFL1006PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL1006PBF
205369-IRFL1006PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL1006PBF 205369-IRFL1006PBF
Manufacturer: Infineon Technologies Win Source Part Number: 205369-IRFL1006PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 80

Manufacturer: Infineon Technologies
Win Source Part Number: 205369-IRFL1006PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 220 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 80

Buy Now Datasheet
Single FETs, MOSFETs - IRFL1006PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL1006PBF
Single FETs, MOSFETs IRFL1006PBF
MOSFET N-CH 60V 1.6A SOT223

MOSFET N-CH 60V 1.6A SOT223

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL1006PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL1006PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL1006PBF
MOSFET N-CH 60V 1.6A SOT223

MOSFET N-CH 60V 1.6A SOT223

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFL1006PBF-ND 278-IRFL1006PBF 205369-IRFL1006PBF IRFL1006PBF IRFL1006PBF
Product Name Single FETs, MOSFETs 60V 1.6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL1006PBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA Tube SOT3; SOT-223 SOT223; TO-261-4, TO-261AA TO-261-4, TO-261AA
PD 1000 milliwatts 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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