MOSFET N-CH 55V 2.8A SOT223 Product overview: IRFL024NTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL024NTRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 55V 2.8A SOT223
Manufacturer: Infineon Technologies
Win Source Part Number: 017615-IRFL024NTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18.3nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
MOSFET N-CH 55V 2.8A SOT223
55V 2.8A 75mΩ@10V,2.8A 1W 4V@250uA N Channel SOT-223-3 MOSFETs ROHS
MOSFET, N-CH, 55V, 2.8A, 150DEG C, 1W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:2.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET MOSFT 55V 4A 75mOhm 12.2nC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFL024NTRPBF | IRFL024NTRPBF | 017615-IRFL024NTRPBF | IRFL024NTRPBFDKR-ND | IRFL024NTRPBF | IRFL024NTRPBF | 42Y0375 | IRFL024NTRPBF |
| Product Name | 55V 2.8A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NTRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 55V, 2.8A, 150Deg C, 1W; Channel Type Infineon | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | ||||
| PD | 2.1 milliwatts | 1000 milliwatts | 1000 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
