Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF IRFL024NPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046966-IRFL024NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18.3nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF - 1046966-IRFL024NPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFL024NPBF-ND - DigiKey
    DigiKey
  • MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V - 70017598 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL024NPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046966-IRFL024NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18.3nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF - 1046966-IRFL024NPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF
1046966-IRFL024NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF 1046966-IRFL024NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046966-IRFL024NPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18.3nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046966-IRFL024NPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18.3nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFL024NPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL024NPBF-ND
Single FETs, MOSFETs IRFL024NPBF-ND
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223

N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V - 70017598 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V
70017598
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V 70017598
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL024NPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL024NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL024NPBF
MOSFET N-CH 55V 2.8A SOT223

MOSFET N-CH 55V 2.8A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046966-IRFL024NPBF IRFL024NPBF-ND 70017598 IRFL024NPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFL024NPBF Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 2.8A;SOT-223;PD 1W;VGS +/-20V Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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