Infineon Technologies AG Single FETs, MOSFETs IRFIZ46NPBF

Description
N-Channel 55V 33A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak
Request a Quote Datasheet
Description
N-Channel 55V 33A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRFIZ46NPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIZ46NPBF-ND
Single FETs, MOSFETs IRFIZ46NPBF-ND
N-Channel 55V 33A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak

N-Channel 55V 33A (Tc) 45W (Tc) Through Hole TO-220AB Full-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ46NPBF - 069495-IRFIZ46NPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ46NPBF
069495-IRFIZ46NPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ46NPBF 069495-IRFIZ46NPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069495-IRFIZ46NPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Full-Pak Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 61nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: Infineon Technologies
Win Source Part Number: 069495-IRFIZ46NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIZ46NPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIZ46NPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIZ46NPBF
MOSFET N-CH 55V 33A TO220AB FP

MOSFET N-CH 55V 33A TO220AB FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFIZ46NPBF-ND 069495-IRFIZ46NPBF IRFIZ46NPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ46NPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220AB Full-Pak TO-220; TO-220-3 Full Pack
V(BR)DSS 55 volts
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