Infineon Technologies AG Single FETs, MOSFETs IRFI4510GPBF

Description
N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak
Request a Quote Datasheet
Description
N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI4510GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI4510GPBF-ND
Single FETs, MOSFETs IRFI4510GPBF-ND
N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak

N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4510GPBF - 777056-IRFI4510GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4510GPBF
777056-IRFI4510GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4510GPBF 777056-IRFI4510GPBF
Manufacturer: Infineon Technologies Win Source Part Number: 777056-IRFI4510GPBF Series: HEXFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Family Name: IRFI4510G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Full-Pak Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2998pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 42W (Tc) Rds On (Maximum) @ Id, Vgs: 13.5 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): STP80NF10FP; SUA70090E-E3; TK55A10J1(Q,M); TK55A10J1(STA4,Q); Introduction Date: May 15, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 777056-IRFI4510GPBF
Series: HEXFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Family Name: IRFI4510G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220AB Full-Pak
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2998pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 42W (Tc)
Rds On (Maximum) @ Id, Vgs: 13.5 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): STP80NF10FP; SUA70090E-E3; TK55A10J1(Q,M); TK55A10J1(STA4,Q);
Introduction Date: May 15, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
100V 35A TO220 MOSFET Transistor
278-IRFI4510GPBF
100V 35A TO220 MOSFET Transistor 278-IRFI4510GPBF
MOSFET N CH 100V 35A TO220 Product overview: IRFI4510GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI4510GPBF can be used for catalog matching and distributor lookup.

MOSFET N CH 100V 35A TO220 Product overview: IRFI4510GPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 35A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 35A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI4510GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI4510GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI4510GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI4510GPBF
MOSFET N CH 100V 35A TO220

MOSFET N CH 100V 35A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack

MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFI4510GPBF-ND 777056-IRFI4510GPBF 278-IRFI4510GPBF IRFI4510GPBF IRFI4510GPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4510GPBF 100V 35A TO220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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