MOSFET 2N-CH 200V 9.1A TO-220FP
MOSFET 2N-CH 200V 9.1A TO220-5 Product overview: IRFI4020H-117P from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.1A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.1A, TO220, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRFI4020H-117P can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 200V 9.1A 21W Through Hole TO-220-5 Full-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 069483-IRFI4020H-117
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Family Name: IRFI4020H
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-5 Full-Pak
Maximum Power Dissipation: 21W
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.1A
Gate-Source Threshold Voltage: 4.9V @ 100μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1240pF @ 25V
Maximum Rds On at Id,Vgs: 100 mOhm @ 5.5A, 10V
Introduction Date: August 22, 2006
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET MOSFT DUAL NCh 200V 9.1A 5-Pin
MOSFET 2N-CH 200V 9.1A TO220-5
MOSFET, DUAL N-CH, 200V, TO-220FP-5; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFI4020H-117P | 289-IRFI4020H-117P | IRFI4020H-117P-ND | 069483-IRFI4020H-117P | IRFI4020H-117P | IRFI4020H-117P | 39AH8937 |
| Product Name | FET, MOSFET Arrays | 200V 9.1A TO220 MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI4020H-117P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 200V, To-220Fp-5; Transistor Polarity Infineon |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| IDSS | 9100 milliamps | 9100 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
