Mosfet Array 2 P-Channel (Dual) 30V 2.3A 1.4W Surface Mount 6-PQFN (2x2)
Mosfet Array 2 P-Channel (Dual) 30V 2.3A 1.4W Surface Mount 6-PQFN (2x2)
Mosfet Array 2 P-Channel (Dual) 30V 2.3A 1.4W Surface Mount 6-PQFN (2x2)
MOSFET 2P-CH 30V 2.3A PQFN Product overview: IRFHS9351TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRFHS9351TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1046922-IRFHS9351TRP
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.3A
Gate-Source Threshold Voltage: 2.4V @ 10μA
Max Gate Charge: 3.7nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Rds On at Id,Vgs: 170 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
DUAL P CHANNEL, -30V, -2.3A, 6-PQFN; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.3A; On Resistance Rds(on):0.135ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
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MOSFET DUAL -30V P-CH 20V VGS MAX
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFHS9351TRPBFCT-ND | 289-IRFHS9351TRPBF | 1046922-IRFHS9351TRPBF | 25T5494 | IRFHS9351TRPBF | IRFHS9351TRPBF | IRFHS9351TRPBF |
| Product Name | FET, MOSFET Arrays | 30V 2.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHS9351TRPBF | Dual P Channel, -30V, -2.3A, 6-Pqfn; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET |
| Package Type | 6-PowerVDFN | Tape & Reel (TR) | SOT3; 6-PQFN (2x2) | TO-3 | 6-PowerVDFN | ||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 1.4 milliwatts | 1400 milliwatts |
