Infineon Technologies AG 25V 9.9A 21A MOSFET Transistor IRFHS8242TRPBF

MOSFET N-CH 25V 9.9A/21A 6PQFN Product overview: IRFHS8242TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 9.9A, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 9.9A, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHS8242TRPBF can be used for catalog matching and distributor lookup.

N-Channel 25V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)

N-Channel 25V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)

Infineon MOSFET IRFHS8242TRPBF

Infineon MOSFET IRFHS8242TRPBF

Infineon MOSFET IRFHS8242TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046918-IRFHS8242TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-PQFN (2x2)
Dimension: 6-PowerVDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 9.9A (Ta), 21A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 653pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance