MOSFET P-CH 30V 11A/24A PQFN
P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)
P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)
P-Channel 30V 11A (Ta), 24A (Tc) 2.8W (Ta) Surface Mount PQFN (3x3)
MOSFET P-CH 30V 11A/24A PQFN Product overview: IRFHM9331TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11A, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM9331TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017606-IRFHM9331TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.8W (Ta)
Family Name: IRFHM9331
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (3x3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta), 24A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 25μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1543pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 10 mOhm @ 11A, 20V
Alternative Parts (Cross-Reference): Si7129DN-T1-GE3; Si7129DN; STL9P3LLH6;
Introduction Date: June 30, 2010
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 30V 11A/24A PQFN
MOSFET, P-CH, -30V, -24A, 150DEG C, 2.8W; Transistor Polarity:P Channel; Continuous Drain Current Id:-24A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-20V; Threshold Voltage Vgs:-1.8V; RoHS Compliant: Yes
MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFHM9331TRPBF | IRFHM9331TRPBFDKR-ND | 278-IRFHM9331TRPBF | 2626750 | 017606-IRFHM9331TRPBF | IRFHM9331TRPBF | 39AH8935 | IRFHM9331TRPBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 11A 24A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM9331TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -24A, 150Deg C, 2.8W; Transistor Polarity Infineon | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 11000 milliamps | -24000 milliamps | ||||||
| PD | 2800 milliwatts | 2.8 milliwatts | 2800 milliwatts |
