Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF IRFHM8329TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046910-IRFHM8329TRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (3x3) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.2V @ 25μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1710pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046910-IRFHM8329TRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (3x3) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.2V @ 25μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1710pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF - 1046910-IRFHM8329TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF
1046910-IRFHM8329TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF 1046910-IRFHM8329TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046910-IRFHM8329TRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (3x3) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2.2V @ 25μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1710pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1046910-IRFHM8329TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (3x3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 57A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 25μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1710pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFHM8329TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFHM8329TRPBFTR-ND
Single FETs, MOSFETs IRFHM8329TRPBFTR-ND
N-Channel 30V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)

N-Channel 30V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)

Buy Now Datasheet
Single FETs, MOSFETs - IRFHM8329TRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFHM8329TRPBF
Single FETs, MOSFETs IRFHM8329TRPBF
MOSFET N-CH 30V 16A/57A PQFN

MOSFET N-CH 30V 16A/57A PQFN

Supplier's Site Datasheet
Singapore
30V 16A 57A MOSFET Transistor
278-IRFHM8329TRPBF
30V 16A 57A MOSFET Transistor 278-IRFHM8329TRPBF
MOSFET N-CH 30V 16A/57A PQFN Product overview: IRFHM8329TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM8329TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 16A/57A PQFN Product overview: IRFHM8329TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, 57A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM8329TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3

MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM8329TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFHM8329TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFHM8329TRPBF
MOSFET N-CH 30V 16A/57A PQFN

MOSFET N-CH 30V 16A/57A PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046910-IRFHM8329TRPBF IRFHM8329TRPBFTR-ND IRFHM8329TRPBF 278-IRFHM8329TRPBF IRFHM8329TRPBF IRFHM8329TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF Single FETs, MOSFETs Single FETs, MOSFETs 30V 16A 57A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 2600 to 33000 milliwatts 2600 milliwatts 2600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PQFN (3x3) 8-PowerTDFN 8-PowerTDFN Tape & Reel (TR) 1710 pF @ 10 V
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