Manufacturer: Infineon Technologies
Win Source Part Number: 1046910-IRFHM8329TRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (3x3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 57A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 25μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1710pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 16A/57A PQFN
N-Channel 30V 16A (Ta), 57A (Tc) 2.6W (Ta), 33W (Tc) Surface Mount PQFN (3x3)
MOSFET N-CH 30V 16A/57A PQFN
MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1046910-IRFHM8329TRPBF | IRFHM8329TRPBF | IRFHM8329TRPBFTR-ND | IRFHM8329TRPBF | IRFHM8329TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8329TRPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 2600 to 33000 milliwatts | 2600 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
