MOSFET N-CH 30V 25A PQFN Product overview: IRFHM8326TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM8326TRPBF can be used for catalog matching and distributor lookup.
N-Channel 30V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface Mount
N-Channel 30V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface Mount
N-Channel 30V 19A (Ta) 2.8W (Ta), 37W (Tc) Surface Mount
Manufacturer: Infineon Technologies
Win Source Part Number: 108333-IRFHM8326TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 50μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2496pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 25A PQFN
MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET N-CH 30V 25A PQFN
MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFHM8326TRPBF | IRFHM8326TRPBFDKR-ND | 108333-IRFHM8326TRPBF | IRFHM8326TRPBF | 45X9499 | IRFHM8326TRPBF | IRFHM8326TRPBF |
| Product Name | 30V 25A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8326TRPBF | Single FETs, MOSFETs | Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| Transconductance | 0.0700 kS | ||||||
| PD | 2.8 milliwatts | 2800 to 37000 milliwatts | 2800 milliwatts |
