MOSFET N-CH 30V 14A/40A PQFN Product overview: IRFHM831TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM831TRPBF can be used for catalog matching and distributor lookup.
N-Channel 30V 14A (Ta), 40A (Tc) 2.5W (Ta), 27W (Tc) Surface Mount PQFN (3x3)
MOSFET N-CH 30V 14A/40A PQFN
Manufacturer: Infineon Technologies
Win Source Part Number: 040716-IRFHM831TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (3x3)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 1050pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 14A/40A PQFN
MOSFET N-CH 30V 14A PQFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFHM831TRPBF | IRFHM831TRPBFTR-ND | IRFHM831TRPBF | 040716-IRFHM831TRPBF | IRFHM831TRPBF | 376-IRFHM831TRPBF |
| Product Name | 30V 14A 40A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM831TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 14A PQFN |
| PD | 2500 milliwatts | 2500 milliwatts | 2500 to 27000 milliwatts | 2500 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | SOT3; PQFN (3x3) | 1050 pF @ 25 V | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel |
