MOSFET N-CH 30V 21A/40A PQFN
MOSFET N-CH 30V 21A/40A PQFN Product overview: IRFHM830TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM830TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 205362-IRFHM830TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (3x3)
Dimension: 8-VQFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 2155pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 20A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3)
N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3)
N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount 8-PQFN-Dual (3.3x3.3)
MOSFET Transistor, N Channel, 40 A, 30 V, 3 mohm, 10 V, 1.8 V RoHS Compliant: Yes
MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms
MOSFET N-CH 30V 21A/40A PQFN
| ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFHM830TRPBF | 2579389P | 278-IRFHM830TRPBF | 205362-IRFHM830TRPBF | IRFHM830TRPBFCT-ND | 75T9981 | IRFHM830TRPBF | IRFHM830TRPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | 30V 21A 40A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM830TRPBF | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 40 A, 30 V, 3 Mohm, 10 V, 1.8 V Rohs Compliant Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 21000 milliamps | |||||||
| PD | 2700 milliwatts | 2.7 milliwatts | 2700 to 37000 milliwatts |
