Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRFHM830DTR2PBF

Description
Win Source Part Number: 1065554-IRFHM830DTR2 PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Package / Case: 8-VQFN Exposed Pad Supplier Device Package: PQFN (3x3) Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V Alternative Parts (Cross-Reference): IRFHM830TR2PBF; IRFHM830TRPBF; IRFH5255TR2PBFIRFHM8 30DTR2PBF.; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IRFHM830DTR2PBFTR,SP 001551956,IRFHM830DT R2PBFCT,IRFHM830DTR2 PBFDKR Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065554-IRFHM830DTR2PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM830DTR2PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1065554-IRFHM830DTR2 PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Package / Case: 8-VQFN Exposed Pad Supplier Device Package: PQFN (3x3) Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V Alternative Parts (Cross-Reference): IRFHM830TR2PBF; IRFHM830TRPBF; IRFH5255TR2PBFIRFHM8 30DTR2PBF.; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IRFHM830DTR2PBFTR,SP 001551956,IRFHM830DT R2PBFCT,IRFHM830DTR2 PBFDKR Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065554-IRFHM830DTR2PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065554-IRFHM830DTR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065554-IRFHM830DTR2PBF
Win Source Part Number: 1065554-IRFHM830DTR2 PBF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Package / Case: 8-VQFN Exposed Pad Supplier Device Package: PQFN (3x3) Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V Alternative Parts (Cross-Reference): IRFHM830TR2PBF; IRFHM830TRPBF; IRFH5255TR2PBFIRFHM8 30DTR2PBF.; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IRFHM830DTR2PBFTR,SP 001551956,IRFHM830DT R2PBFCT,IRFHM830DTR2 PBFDKR Product Status: Obsolete

Win Source Part Number: 1065554-IRFHM830DTR2PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Cut Tape (CT),
Standard Package: 400
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: PQFN (3x3)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1797 pF @ 25 V
Alternative Parts (Cross-Reference): IRFHM830TR2PBF; IRFHM830TRPBF; IRFH5255TR2PBFIRFHM830DTR2PBF.;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IRFHM830DTR2PBFTR,SP001551956,IRFHM830DTR2PBFCT,IRFHM830DTR2PBFDKR
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM830DTR2PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFHM830DTR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFHM830DTR2PBF
MOSFET N-CH 30V 20A PQFN

MOSFET N-CH 30V 20A PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1065554-IRFHM830DTR2PBF IRFHM830DTR2PBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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