Manufacturer: Infineon Technologies
Win Source Part Number: 1046903-IRFHE4250DTR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 32-PQFN (6x6)
Maximum Power Dissipation: 156W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 86A, 303A
Gate-Source Threshold Voltage: 2.1V @ 35μA
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 1735pF @ 13V
Maximum Rds On at Id,Vgs: 2.75 mOhm @ 27A, 10V
Alternative Parts (Cross-Reference): AON6922; IRFH4255DTRPbF; FDPC8014S;
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) 25V 86A, 303A 156W Surface Mount 32-PQFN (6x6)
Power Field-Effect Transistor Product overview: IRFHE4250DTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRFHE4250DTRPBF can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 25V 86A/303A 32QFN
MOSFET, N CHANNEL, 25V, 60A, PQFN-30; Transistor Polarity:N Channel + Schottky; Drain Source Voltage Vds:25V; Continuous Drain Current Id:303A; On Resistance Rds(on):700µohm; Transistor Mounting:Surface Mount; No. of Pins:32Pins RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1046903-IRFHE4250DTRPBF | IRFHE4250DTRPBFTR-ND | 289-IRFHE4250DTRPBF | IRFHE4250DTRPBF | 45X9494 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHE4250DTRPBF | FET, MOSFET Arrays | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 25V, 60A, Pqfn-30; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | |||
| V(BR)DSS | 25 volts | ||||
| PD | 156000 milliwatts | 156000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
