P-Channel 30V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
P-Channel 30V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
P-Channel 30V 21A (Ta), 40A (Tc) 3.1W (Ta) Surface Mount PQFN (5x6)
Manufacturer: Infineon Technologies
Win Source Part Number: 114172-IRFH9310TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 100μA
Max Gate Charge: 58nC @ 4.5V
Max Input Capacitance: 5250pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): AON6407; IRFH9310TR2PBF; Si7149ADP-T1-GE3; IRFH9310TRPBF;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 21A/40A PQFN Product overview: IRFH9310TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH9310TRPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 21A/40A PQFN
MOSFET P-CH 30V 21A/40A PQFN
MOSFET, P-CH, -21A, -30V, QFN-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-21A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power RoHS Compliant: Yes
MOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFH9310TRPBFTR-ND | 114172-IRFH9310TRPBF | 278-IRFH9310TRPBF | IRFH9310TRPBF | IRFH9310TRPBF | 32AC7464 | IRFH9310TRPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH9310TRPBF | 30V 21A 40A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -21A, -30V, Qfn-8; Transistor Polarity Infineon | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Package Type | 8-PowerVDFN | SOT3; PQFN (5x6) | Tape & Reel (TR) | 8-PowerVDFN | 8-PowerVDFN | TO-3 | |
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 3100 milliwatts | 3.1 milliwatts | 3100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
