Manufacturer: Infineon Technologies
Win Source Part Number: 1187626-IRFH8334TR2P
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.2W, 30W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 14A, 44A
Rds On (Maximum) at Id, Vgs: 9mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1180pF at 10V
MOSFET N-CH 30V 12A 5X6 PQFN Product overview: IRFH8334TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8334TR2PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 12A 5X6 PQFN
MOSFET N-CH 30V 12A 5X6 PQFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1187626-IRFH8334TR2PBF | 278-IRFH8334TR2PBF | IRFH8334TR2PBF | IRFH8334TR2PBF |
| Product Name | FETs - Single - IRFH8334TR2PBF | 30V 12A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 3200 to 30000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
