MOSFET N-CH 30V 23A/90A PQFN Product overview: IRFH8324TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 23A, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 23A, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8324TR2PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 128709-IRFH8324TR2PB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 90A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 2380pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
MOSFET N-CH 30V 18A 5X6 PQFN
MOSFET N-CH 30V 23A/90A PQFN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFH8324TR2PBF | 128709-IRFH8324TR2PBF | IRFH8324TR2PBFTR-ND | 376-IRFH8324TR2PBF | IRFH8324TR2PBF |
| Product Name | 30V 23A 90A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8324TR2PBF | Single FETs, MOSFETs | MOSFET N-CH 30V 18A 5X6 PQFN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||
| PD | 3600 milliwatts | 3600 to 54000 milliwatts | 3600 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; PQFN (5x6) | 8-PowerTDFN | -55degC ~ 150degC (TJ) |
