Infineon Technologies AG Single FETs, MOSFETs IRFH8324TR2PBF

Description
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFH8324TR2PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH8324TR2PBFTR-ND
Single FETs, MOSFETs IRFH8324TR2PBFTR-ND
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)

N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - IRFH8324TR2PBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH8324TR2PBFCT-ND
Single FETs, MOSFETs IRFH8324TR2PBFCT-ND
N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)

N-Channel 30V 23A (Ta), 90A (Tc) 3.6W (Ta), 54W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8324TR2PBF - 128709-IRFH8324TR2PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8324TR2PBF
128709-IRFH8324TR2PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8324TR2PBF 128709-IRFH8324TR2PBF
Manufacturer: Infineon Technologies Win Source Part Number: 128709-IRFH8324TR2PB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 90A (Tc) Gate-Source Threshold Voltage: 2.35V @ 50μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 2380pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.1 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 128709-IRFH8324TR2PBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 90A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 2380pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH8324TR2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH8324TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH8324TR2PBF
MOSFET N-CH 30V 23A/90A PQFN

MOSFET N-CH 30V 23A/90A PQFN

Supplier's Site
MOSFET N-CH 30V 18A 5X6 PQFN - 376-IRFH8324TR2PBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 18A 5X6 PQFN
376-IRFH8324TR2PBF
MOSFET N-CH 30V 18A 5X6 PQFN 376-IRFH8324TR2PBF
MOSFET N-CH 30V 18A 5X6 PQFN

MOSFET N-CH 30V 18A 5X6 PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFH8324TR2PBFTR-ND 128709-IRFH8324TR2PBF IRFH8324TR2PBF 376-IRFH8324TR2PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8324TR2PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 30V 18A 5X6 PQFN
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN SOT3; PQFN (5x6) -55degC ~ 150degC (TJ)
V(BR)DSS 30 volts 30 volts
PD 3600 to 54000 milliwatts 3600 milliwatts
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