Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8316TRPBF IRFH8316TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046897-IRFH8316TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 50μA Max Gate Charge: 59nC @ 10V Max Input Capacitance: 3610pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.95 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1046897-IRFH8316TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 50μA Max Gate Charge: 59nC @ 10V Max Input Capacitance: 3610pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.95 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8316TRPBF - 1046897-IRFH8316TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8316TRPBF
1046897-IRFH8316TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8316TRPBF 1046897-IRFH8316TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046897-IRFH8316TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 59W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 27A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 50μA Max Gate Charge: 59nC @ 10V Max Input Capacitance: 3610pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.95 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046897-IRFH8316TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 50μA
Max Gate Charge: 59nC @ 10V
Max Input Capacitance: 3610pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.95 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFH8316TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH8316TRPBFTR-ND
Single FETs, MOSFETs IRFH8316TRPBFTR-ND
N-Channel 30V 27A (Ta), 50A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 27A (Ta), 50A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
Sheung Wan, Hong Kong
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Buy Now Datasheet
MOSFET N-CH 30V 27A PQFN5X6 - 376-IRFH8316TRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 30V 27A PQFN5X6
376-IRFH8316TRPBF
MOSFET N-CH 30V 27A PQFN5X6 376-IRFH8316TRPBF
MOSFET N-CH 30V 27A PQFN5X6

MOSFET N-CH 30V 27A PQFN5X6

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH8316TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH8316TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH8316TRPBF
MOSFET N-CH 30V 27A/50A 8PQFN

MOSFET N-CH 30V 27A/50A 8PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046897-IRFH8316TRPBF IRFH8316TRPBFTR-ND IRFH8316TRPBF 376-IRFH8316TRPBF IRFH8316TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8316TRPBF Single FETs, MOSFETs MOSFET MOSFET N-CH 30V 27A PQFN5X6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 3600 to 59000 milliwatts 3600 milliwatts
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