MOSFET N CH 30V 32A PQFN5X6 Product overview: IRFH8311TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8311TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017602-IRFH8311TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 96W (Tc)
Family Name: IRFH8311
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-TQFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 32A (Ta), 169A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 100μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 4960pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.1 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): Si7792DP-T1-GE3; SiR164DP-T1-GE3; TPCA8028-H(2L1S1AV; TPCA8058-H,LQ(M;
Introduction Date: October 31, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 30V 32A (Ta), 169A (Tc) 3.6W (Ta), 96W (Tc) Surface Mount PQFN (5x6)
N-Channel 30V 32A (Ta), 169A (Tc) 3.6W (Ta), 96W (Tc) Surface Mount PQFN (5x6)
MOSFET N CH 30V 32A PQFN5X6
MOSFET, N-CH, 30V, 80A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation RoHS Compliant: Yes
MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
MOSFET N CH 30V 32A PQFN5X6
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH8311TRPBF | 2224747P | 017602-IRFH8311TRPBF | IRFH8311TRPBFCT-ND | IRFH8311TRPBF | 13AC9111 | IRFH8311TRPBF | IRFH8311TRPBF |
| Product Name | 30V 32A MOSFET Transistor | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8311TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 80A, Pqfn; Transistor Polarity Infineon | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0830 kS | |||||||
| PD | 3.6 milliwatts | 3600 to 96000 milliwatts | 3600 milliwatts |
