MOSFET N-CH 20V 49A/100A 8PQFN Product overview: IRFH6200TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 49A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 49A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH6200TRPBF can be used for catalog matching and distributor lookup.
N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer: Infineon Technologies
Win Source Part Number: 1046883-IRFH6200TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 49A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.1V @ 150μA
Max Gate Charge: 230nC @ 4.5V
Max Input Capacitance: 10890pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 0.95 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET 20V SINGLE N-CH 1.2mOhms 155nC
MOSFET N-CH 20V 49A/100A 8PQFN
MOSFET N-CH 20V 49A/100A 8PQFN
MOSFET, N-CH, 20V, 100A, 150DEG C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH6200TRPBF | IRFH6200TRPBFTR-ND | 2579377P | 1046883-IRFH6200TRPBF | IRFH6200TRPBF | IRFH6200TRPBF | IRFH6200TRPBF | 91Y4700 |
| Product Name | 20V 49A 100A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH6200TRPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 100A, 150Deg C, 156W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 250 milliwatts | 3600 to 156000 milliwatts | 3600 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
