Infineon Technologies AG Single FETs, MOSFETs IRFH5303TRPBF

Description
N-Channel 30V 23A (Ta), 82A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 30V 23A (Ta), 82A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IRFH5303TRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH5303TRPBF-ND
Single FETs, MOSFETs IRFH5303TRPBF-ND
N-Channel 30V 23A (Ta), 82A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)

N-Channel 30V 23A (Ta), 82A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5303TRPBF - 1046880-IRFH5303TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5303TRPBF
1046880-IRFH5303TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5303TRPBF 1046880-IRFH5303TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046880-IRFH5303TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta), 82A (Tc) Gate-Source Threshold Voltage: 2.35V @ 50μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 2190pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 49A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1046880-IRFH5303TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 82A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 50μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 2190pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 49A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH5303TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH5303TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH5303TRPBF
MOSFET N-CH 30V 23A/82A 8PQFN

MOSFET N-CH 30V 23A/82A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFH5303TRPBF-ND 1046880-IRFH5303TRPBF IRFH5303TRPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5303TRPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerVDFN SOT3; PQFN (5x6) 8-PowerVDFN
V(BR)DSS 30 volts
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