Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5302DTRPBF IRFH5302DTRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 069477-IRFH5302DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6) Single Die
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 29A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 100μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3635pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 29A/100A PQFN Product overview: IRFH5302DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 29A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 29A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5302DTRPBF can be used for catalog matching and distributor lookup.

N-Channel 30V 29A (Ta), 100A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6) Single Die