Power Field-Effect Transistor, 40A I(D), 25V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 Product overview: IRFH5250DTRPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 25V, 0.0022ohm, QFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 25V, 0.0022ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5250DTRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017596-IRFH5250DTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6) Single Die
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 40A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 150μA
Max Gate Charge: 83nC @ 10V
Max Input Capacitance: 6115pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 25V 40A/100A 8PQFN
MOSFET N-CH 25V 40A/100A 8PQFN
MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH5250DTRPBF | 017596-IRFH5250DTRPBF | IRFH5250DTRPBFTR-ND | IRFH5250DTRPBF | IRFH5250DTRPBF | IRFH5250DTRPBF |
| Product Name | N-Channel 40A 25V 0.0022ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5250DTRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 25 volts | 25 volts | ||||
| PD | 3600 to 156000 milliwatts | 3600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
