Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IRFH5053TR2PBF

Description
Win Source Part Number: 1065540-IRFH5053TR2P BF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6) Single Die Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V Alternative Parts (Cross-Reference): NTMFS6B14NT1G; IRFH7110TRPBF; SI7252DP-T1-GE3; IRF6668TRPBF; IPD50N10S3L16ATMA1; IRFH5210TR2PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001570782,IRFH5053 TR2PBFDKR,IRFH5053TR 2PBFTR,IRFH5053TR2PB FCT Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065540-IRFH5053TR2PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH5053TR2PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1065540-IRFH5053TR2P BF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6) Single Die Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V Alternative Parts (Cross-Reference): NTMFS6B14NT1G; IRFH7110TRPBF; SI7252DP-T1-GE3; IRF6668TRPBF; IPD50N10S3L16ATMA1; IRFH5210TR2PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001570782,IRFH5053 TR2PBFDKR,IRFH5053TR 2PBFTR,IRFH5053TR2PB FCT Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065540-IRFH5053TR2PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065540-IRFH5053TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065540-IRFH5053TR2PBF
Win Source Part Number: 1065540-IRFH5053TR2P BF Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Cut Tape (CT), Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6) Single Die Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V Alternative Parts (Cross-Reference): NTMFS6B14NT1G; IRFH7110TRPBF; SI7252DP-T1-GE3; IRF6668TRPBF; IPD50N10S3L16ATMA1; IRFH5210TR2PBF; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001570782,IRFH5053 TR2PBFDKR,IRFH5053TR 2PBFTR,IRFH5053TR2PB FCT Product Status: Obsolete

Win Source Part Number: 1065540-IRFH5053TR2PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Cut Tape (CT),
Standard Package: 400
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6) Single Die
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
Alternative Parts (Cross-Reference): NTMFS6B14NT1G; IRFH7110TRPBF; SI7252DP-T1-GE3; IRF6668TRPBF; IPD50N10S3L16ATMA1; IRFH5210TR2PBF;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001570782,IRFH5053TR2PBFDKR,IRFH5053TR2PBFTR,IRFH5053TR2PBFCT
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH5053TR2PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH5053TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH5053TR2PBF
MOSFET N-CH 100V 9.3A PQFN56

MOSFET N-CH 100V 9.3A PQFN56

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1065540-IRFH5053TR2PBF IRFH5053TR2PBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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