MOSFET N-CH 200V 5.1A 8PQFN Product overview: IRFH5020TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5020TRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 017595-IRFH5020TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Family Name: IRFH5020
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.1A (Ta)
Gate-Source Threshold Voltage: 5V @ 150μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2290pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): RJK2055DPA; RJK2055DPA-00#J0; SiR616DP-T1-GE3; TPH2900ENH,L1Q;
Introduction Date: October 07, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 200V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 200V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)
N-Channel 200V 5.1A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 200V 5.1A 8PQFN
MOSFET, N-CH, 200V, 34A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 200V 5.1A 8PQFN
MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFH5020TRPBF | 2172609P | 2172608 | 017595-IRFH5020TRPBF | IRFH5020TRPBFTR-ND | IRFH5020TRPBF | 91Y4690 | IRFH5020TRPBF | IRFH5020TRPBF |
| Product Name | 200V 5.1A MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5020TRPBF | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 34A, Pqfn-8; Transistor Polarity Infineon | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| PD | 3.6 milliwatts | 3600 to 8300 milliwatts | 3600 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
