The 1065537-IRFH5010TR2PBF is an N-channel MOSFET designed for high-efficiency applications, particularly in mobile DC-DC converters. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current rating of 13A at 25¬8C. The device exhibits a low on-resistance (Rds(on)) of 9mOc at 50A and 10V, which contributes to reduced conduction losses. The gate threshold voltage (Vgs(th)) is specified at a maximum of 4V at 150¬µA. This MOSFET has a total gate charge (Qg) of 98nC at 10V, indicating efficient switching performance. The input capacitance (Ciss) is rated at 4340pF at 25V, which is relevant for determining the drive requirements in high-frequency applications. The product is packaged in an 8-PQFN (5x6) format, suitable for surface mount technology (SMT). Engineers considering this component should note that it is classified as obsolete, which may affect availability and support for future projects.
MOSFET N-CH 100V 13A 5X6 PQFN Product overview: IRFH5010TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5010TR2PBF can be used for catalog matching and distributor lookup.
Win Source Part Number: 1065537-IRFH5010TR2P
Category: Discrete Semiconductor Products>Transistors
Package: Cut Tape (CT),
Standard Package: 400
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (5x6)
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Alternative Parts (Cross-Reference): IRLH5030TRPBF; IRFH5110TRPBF; IRFH5110TR2PBF; IRFH7107TRPBF; FDMS86152; IRFH5210TR2PBF;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IRFH5010TR2PBFDKR,IR
Product Status: Obsolete
MOSFET N-CH 100V 13A 5X6 PQFN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFH5010TR2PBF | 1065537-IRFH5010TR2PBF | IRFH5010TR2PBF |
| Product Name | 100V 13A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | Cut Tape (CT) | SOT3 | 8-PowerVDFN |
