Manufacturer: Infineon Technologies
Win Source Part Number: 1046867-IRFH5007TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 17A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N-CH 75V 17A/100A 8PQFN
MOSFET N-CH 75V 17A/100A 8PQFN Product overview: IRFH5007TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 17A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 17A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5007TRPBF can be used for catalog matching and distributor lookup.
N-Channel 75V 17A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
MOSFET N-CH 75V 17A/100A 8PQFN
MOSFET N-CH 75V 17A 5X6 PQFN
MOSFET, N-CH, 75V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1046867-IRFH5007TRPBF | IRFH5007TRPBF | 278-IRFH5007TRPBF | IRFH5007TRPBFTR-ND | IRFH5007TRPBF | 376-IRFH5007TRPBF | 13AC9105 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH5007TRPBF | Single FETs, MOSFETs | 75V 17A 100A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 75V 17A 5X6 PQFN | Mosfet, N-Ch, 75V, 100A, Pqfn; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 75 volts | 75 volts | 75 volts | ||||
| PD | 3600 to 156000 milliwatts | 3600 milliwatts | 3.6 milliwatts | 3600 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; PQFN (5x6) | 8-PowerTDFN | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | TO-3 |
