Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4209DTRPBF IRFH4209DTRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 1046856-IRFH4209DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 44A (Ta), 260A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 100μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 4620pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 25V 44A/260A PQFN Product overview: IRFH4209DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 44A, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 44A, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH4209DTRPBF can be used for catalog matching and distributor lookup.

N-Channel 25V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)