Infineon Technologies AG Single FETs, MOSFETs IRFH4209DTRPBF

Description
N-Channel 25V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet
Description
N-Channel 25V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFH4209DTRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH4209DTRPBF-ND
Single FETs, MOSFETs IRFH4209DTRPBF-ND
N-Channel 25V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

N-Channel 25V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
Singapore
25V 44A 260A MOSFET Transistor
278-IRFH4209DTRPBF
25V 44A 260A MOSFET Transistor 278-IRFH4209DTRPBF
MOSFET N-CH 25V 44A/260A PQFN Product overview: IRFH4209DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 44A, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 44A, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH4209DTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 44A/260A PQFN Product overview: IRFH4209DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 44A, 260A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 44A, 260A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH4209DTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4209DTRPBF - 1046856-IRFH4209DTRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4209DTRPBF
1046856-IRFH4209DTRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4209DTRPBF 1046856-IRFH4209DTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1046856-IRFH4209DTRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 44A (Ta), 260A (Tc) Gate-Source Threshold Voltage: 2.1V @ 100μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 4620pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1046856-IRFH4209DTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 44A (Ta), 260A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 100μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 4620pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.1 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH4209DTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH4209DTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH4209DTRPBF
MOSFET N-CH 25V 44A/260A PQFN

MOSFET N-CH 25V 44A/260A PQFN

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFH4209DTRPBF-ND 278-IRFH4209DTRPBF 1046856-IRFH4209DTRPBF IRFH4209DTRPBF
Product Name Single FETs, MOSFETs 25V 44A 260A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH4209DTRPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN Tape & Reel (TR) SOT3; PQFN (5x6) 8-PowerTDFN
PD 3500 milliwatts 3500 to 125000 milliwatts
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