Infineon Technologies AG Single FETs, MOSFETs IRFH3707TR2PBF

Description
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
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Description
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFH3707TR2PBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH3707TR2PBFTR-ND
Single FETs, MOSFETs IRFH3707TR2PBFTR-ND
N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)

N-Channel 30V 12A (Ta), 29A (Tc) 2.8W (Ta) Surface Mount 8-PQFN (3x3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 976532-IRFH3707TR2PBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
976532-IRFH3707TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 976532-IRFH3707TR2PBF
Win Source Part Number: 976532-IRFH3707TR2PB F Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HEXFET® Package: Tape & Reel Standard Package: 400 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta) Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3x3) Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001566048,IRFH3707 TR2PBFDKR,IRFH3707TR 2PBFTR,IRFH3707TR2PB FCT Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 976532-IRFH3707TR2PBF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HEXFET®
Package: Tape & Reel
Standard Package: 400
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3x3)
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001566048,IRFH3707TR2PBFDKR,IRFH3707TR2PBFTR,IRFH3707TR2PBFCT
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH3707TR2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH3707TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH3707TR2PBF
MOSFET N-CH 30V 12A/29A 8PQFN

MOSFET N-CH 30V 12A/29A 8PQFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFH3707TR2PBFTR-ND 976532-IRFH3707TR2PBF IRFH3707TR2PBF
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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