Infineon Technologies AG Single FETs, MOSFETs IRFB812PBF

MOSFET N CH 500V 3.6A TO220AB

N-Channel 500V 3.6A (Tc) 78W (Tc) Through Hole TO-220AB

MOSFET N CH 500V 3.6A TO220AB Product overview: IRFB812PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB812PBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 777045-IRFB812PBF
Series: HEXFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Family Name: IRFB812
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 810pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 78W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): STP4N52K3; 2SK1008-01; STP3NK50Z; STP2NA50;
Introduction Date: June 24, 2011
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited